Semiconductor device comprises: (a) a semiconductor substrate (1) of a first conducting type with a doping layer (6,7,8) formed in the substrate; (b) a doping region (9) of second conducting type which penetrates a doping layer or one of the doping layers (6,7,8) and extends to a specified depth from the surface of the substrate; and (c) a contact conductor (4) formed on the substrate surface in contact with the doping region.
