| 摘要 |
PURPOSE:To enhance yield and to reduce cost, by a method wherein a large number of longitudinal wirings and a large number of transverse wirings are provided to a substrate so as not cross each other at a right angle and rectifying elements generating heat by forward current continuity are provided to the intersecting parts of the longitudinal wirings and the transverse wirings. CONSTITUTION:The transverse wirings S1-S32 and longitudinal wirings I1-I104 provided to a substrate 1 cross each other at an angle theta (not a right angle) and the orifices sigma1-sigma3328 formed to an orifice plate 2 are arranged to the intersecting points thereof. P-type amorphous silicon 6 and N-type amorphous silicon 7 are respectively formed by a plasma CVD method and a P-N junction is constituted and, therefore, no current flows from the longitudinal wiring I to the transverse wirings S and only the current from the transverse wiring S to the longitudinal wiring I flows. At this time, when the resistor in the forward direction of a rectifying element is set to about 10OMEGA, a rectifying element generates heat by applying forward voltage of about 10V between the longitudinal wiring I and the transverse wring S and a liquid droplet is emitted from the orifice sigma and the rectifying element plays the role as a heat generating element. |
