| 摘要 |
PURPOSE:To execute a fine processing operation by a method wherein, when an electronic device whose main constituent elements are a carbon atom and a hydrogen atom and which uses an amorphous or microcrystalline hard carbon film is patterned, the hard carbon film is etched and removed by a dry etching metnod utilizing a vapor reaction. CONSTITUTION:A hard carbon film 3 is formed, by using a plasma CVD method, an ion beam method, a hot filament or the like, on the whole surface of a substrate 1 where a patterned lower-part electrode 2 has been formed. Then, a resist pattern 4 is formed in a required part of the hard carbon film 3. This assembly is dry-etched by using a plasma etching apparatus under conditions which are indicated in Table I. Then, the resist pattern 4 is removed and an upper-part electrode pattern 5 is formed on the hard carbon film 3. Thereby, the hard carbon film can be processed finely and can be applied to an electronic device. |
