| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to accomplish favorable surface morphology without surface defects and maintain favorable crystal quality and further obtain a desired high positive hole concentration when growing C-doped GaAs using halomethane material. SOLUTION: A first gas containing a V-group element, a second gas containing a III-group element and a third gas containing a IV- or VI-group element are used as supply gases. While a substrate is turned, a compound semiconductor composed of the above-mentioned V-group element and III-group element with the above-mentioned IV or VI-group element added as impurity is formed on the substrate by vapor phase deposition. This crystal growth is performed so that a growth condition formula ofω>3.2×V<2>×P will hold, whereωis the number of revolutions per minute of the substrate or a susceptor with the substrate placed thereon; V is the total flow rate of the material gases and carrier gas applied to the substrate, in liters per minute; and P is the pressure in the deposition chamber, in atmospheres.
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