| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist pattern with a favorable shape, by preventing the deactivation of an acid generated from an acid generating agent. SOLUTION: Depending upon whether the pre-formed shape of a resist pattern has the tendency of T-top or slant shoulders in comparison with a reference pattern shape, the composition of a resist is so determined that the wear quantity of the film of the resist pattern increases or decreases. After applying the resist with the determined composition to a semiconductor substrate 11 to form a resist film 12, exposure 14 is performed to the resist film 12 via a mask 13 to form a resist pattern 16 by developing the exposed resist film 12. |
