| 摘要 |
A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF4 and CHF3provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.
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