发明名称 |
Thin film forming method and apparatus |
摘要 |
According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.
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申请公布号 |
US5658389(A) |
申请公布日期 |
1997.08.19 |
申请号 |
US19930136615 |
申请日期 |
1993.10.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUDA, TETSUO;OKANO, HARUO;OHIWA, TOKUHISA |
分类号 |
C23C16/50;C23C14/22;C23C16/452;C23C16/511;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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