发明名称 Thin film forming method and apparatus
摘要 According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.
申请公布号 US5658389(A) 申请公布日期 1997.08.19
申请号 US19930136615 申请日期 1993.10.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUDA, TETSUO;OKANO, HARUO;OHIWA, TOKUHISA
分类号 C23C16/50;C23C14/22;C23C16/452;C23C16/511;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):C23C16/00 主分类号 C23C16/50
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