| 摘要 |
PROBLEM TO BE SOLVED: To provide a level-shift drive circuit using a MOS gate device, which is constituted to endure a breakdown action caused by communicating current. SOLUTION: This circuit is constituted so that internal intrinsic inductances Ls1 , Ls2 may have small values by shortening the length of a conductor further and positioning a parasitic substrate diode Db22 and a common(COM) node 36 so that the number of inductance routes may be reduced. To reduce the voltage generated at an external capacitor 28, the capacity Cb of the capacitor 28 is increased. The size of a charging capacitor 26 is increased and power voltage is so maintained as to have less fluctuation as possible so that an internal parasitic diode Ds in an integrated circuit may be prevented from becoming ON prematurely. |
