发明名称 |
Capped anneal |
摘要 |
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of AlxGa1-xAs (106), next annealing out defects with the AlxGa1-xAs cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap.
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申请公布号 |
US5659188(A) |
申请公布日期 |
1997.08.19 |
申请号 |
US19950475724 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KAO, YUNG-CHUNG;PLUMTON, DONALD L. |
分类号 |
H01L29/73;H01L21/20;H01L21/203;H01L21/324;H01L21/331;H01L21/338;H01L29/205;H01L29/737;H01L29/812;(IPC1-7):H01L21/20 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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