| 摘要 |
A method of manufacturing a semiconductor device in which a portion of a monocrystalline silicon layer protruded from a surface of an insulating member is polished up to the surface by a chemical-mechanical polishing is disclosed. A polycrystalline silicon layer and a leveling material are formed in sequence on the protruded portion of the monocrystalline silicon layer and on an exposed part of the surface of the insulating member, and a reactive ion etching and the chemical-mechanical polishing are carried out. |
