发明名称 SEMICONDUCTOR FORCE SENSOR
摘要 PROBLEM TO BE SOLVED: To make a temperature compensation for a semiconductor force sensor having the negative temperature coefficient of sensitivity. SOLUTION: A bridge circuit 100 is made of gauge resistors RA to RD, each having the positive temperature coefficient of a resistance value. The resistors RA to RD are combined with one another like a bridge and actuated with constant current. In the bridge circuit 100, the connection point B of the resistors RA and R and the connection point C of the resistors RB and RD form an output terminal. Furthermore, the resistors R-to R. are formed on a thin silicone diaphragm, and the sensitivity of the bridge circuit 100 has a negative temperature coefficient. A temperature characteristic compensation resistor R1 with a larger temperature coefficient than the temperature coefficient of the resistors RA to RA is connected to the bridge circuit 100 in parallel. In this case, the resistance value of the resistor R1 is set at [(δ-α)/β-1]×rB, provided that the combined resistance of the bridge circuit 100 is rB, the temperature coefficient of the sensitivity of the bridge circuit 100 under the application of constant current isβ, the temperature coefficient of the resistance value of each of the resistors RA, to RD isδ, and the temperature coefficient of the resistance value of the resistor R1 isα.
申请公布号 JPH09218118(A) 申请公布日期 1997.08.19
申请号 JP19960047989 申请日期 1996.02.08
申请人 DENSO CORP 发明人 IKUTA TOSHIO;YAMADA TOSHITAKA
分类号 G01L1/00;G01B7/16;G01L9/00;G01L9/04;G01L19/04;(IPC1-7):G01L9/04 主分类号 G01L1/00
代理机构 代理人
主权项
地址