发明名称 |
Method of improving uniformity of metal-to-poly capacitors composed by polysilicon oxide and avoiding device damage |
摘要 |
A method of forming capacitors comprising polysilicon, polysilicon oxide, metal is described which significantly improves uniformity of capacitance across the silicon integrated circuit wafer and avoids damage to electrical contact regions. A first layer of polysilicon oxide is formed on a polysilicon first capacitor plate. The wafer is then dipped in a buffered oxide etch or subjected to a dry anisotropic etch. The etching conditions the polysilicon layer so that subsequent polysilicon oxide growth is very uniform and controllable. A second polysilicon oxide layer is then formed on the polysilicon first capacitor plate. A layer of silicon nitride is formed on the polysilicon oxide and a second capacitor plate is formed on the layer of silicon nitride completing the capacitor. Improved capacitance uniformity across the wafer is achieved and device damage is avoided.
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申请公布号 |
US5658821(A) |
申请公布日期 |
1997.08.19 |
申请号 |
US19960721668 |
申请日期 |
1996.09.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN, HSIN-PAI;KU, SUE-MEI;CHEN, PEI-HUNG;WEI, CHIH-SHIH |
分类号 |
H01L21/02;H01L21/321;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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