| 发明名称 |
Manganese dioxide-based material |
| 摘要 |
The invention provides a manganese dioxide-based material which is highly crystalline and chemically prepared. The material has a predominantly ramsdellite structure, and has a powder X-ray diffraction pattern (CuK alpha radiation) in which the ratio of a [110] peak height to a [201] peak height is at least 0,6:1,0. The material can be used as an electrode material in an electrochemical cell 10.
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| 申请公布号 |
US5658693(A) |
申请公布日期 |
1997.08.19 |
| 申请号 |
US19950391072 |
申请日期 |
1995.02.17 |
| 申请人 |
TECHNOLOGY FINANCE CORPORATION (PROPRIETARY) LIMITED |
发明人 |
THACKERAY, MICHAEL MAKEPEACE;ROSSOUW, MARGARETHA HENDRINA |
| 分类号 |
C01G45/00;C01G45/02;C25B11/06;C25B11/16;H01M4/131;H01M4/48;H01M4/485;H01M4/50;H01M4/505;(IPC1-7):H01M4/50 |
主分类号 |
C01G45/00 |
| 代理机构 |
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