Ultra-small semiconductor devices having patterned edge planar surfaces

摘要

Ultra-small semiconductor devices and a method of fabrication including patterning the planar surface of a substrate to form a pattern edge (e.g. a mesa) and consecutively forming a plurality of layers of semiconductor material in overlying relationship to the pattern edge so that a discontinuity is produced in the layers and a first layer on one side of the pattern edge is aligned with and in electrical contact with a different layer on the other side of the pattern edge.