发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device is disclosed. After an insulating film having an opening is formed on a first thin tungsten film, an impurity is introduced into the substrate through the opening to form a punch-through stopper between a source and a drain. Then, on the first tungsten film inside the opening, a second tungsten film is selectively deposited to form a gate electrode. With this method, it is possible to easily fabricate high-speed MOSFETs whose channel length is less than half a micron.
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申请公布号 |
US5658811(A) |
申请公布日期 |
1997.08.19 |
申请号 |
US19950405836 |
申请日期 |
1995.03.17 |
申请人 |
HITACHI, LTD. |
发明人 |
KIMURA, SHINICHIRO;NODA, HIROMASA;KOBAYASHI, NOBUYOSHI;GOTO, YASUSHI;KURE, TOKUO |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/092;H01L29/06;H01L29/10;H01L29/423;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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