| 摘要 |
PROBLEM TO BE SOLVED: To accomplish improvement both in luminous intensity and in bluing emitted light. SOLUTION: An AIN buffer layer 2 of 500Å is formed on a sapphire substrate 1. A silicon-doped GaN high carrier density n<+> layer 3 of about 2.0μm in film thickness and electron density of 2×10<18> /cm<3> , a silicon-doped (Alx2 Ga1-x2 )y2 In1-y2 N high carrier density n<+> layer 4 of about 2.0μm in film thickness and electron density of 2×10<18> cm<3> , a zinc and silicon-deped (Alx1 Ga1-x1 )y1 In1-y1 N n-layer (light emitting later) 5 of about 0.5 μm in film thickness, and a magnesium-doped (Alx2 Ga1-x2 )y2 In1-y2 N P-layer 6 of about 1.0μm in film thickness and hole density of 2×10<17> /cm<3> are formed successively on the buffer layer 2. Nickel electrodes 7 and 8, to be connected to the above-mentioned P-layer 6 and high carrier density<+> layer 4, are formed. They are electrically insulation- isolated by a groove 9. The ratio of components of Al, Ga and In of the layers 4, 5 and 6 is selected in such a manner that the lattice constant of each layer is coincided with the lattice constant of the layer 3. |
