| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain the resistance value of the whole of a resistance layer from being changed even when ambient temperature is increased by forming the resistance layer out of two plural layers made of resistant materials different at least in tempera ture characteristics. SOLUTION: A resistance layer 1 is formed out of a first resistance layer 102 composed ofα-Si , and of a second resistance layer 2 composed of CT2 O3 different from the resistance layer 102 in temperature characteristics. An insulating layer 103 is formed over the resistance layer 2, concurrently holes 112, are provided for the insulating layer 103, and furthermore emitter corns 115 made out of high melting point metallic material and the like are formed at the bottom surfaces of the holes 114. The resistance value of the whole of the resistance layer 1 is so designed as to be a prescribed value by changing the film thickness of the resistance layer 102 or the resistance layer 2 while the resistivities of the resistance layer 102 and the resistance layer 2 are taken into consideration. This constitution thereby allows the uppermost layer of the resistance layer 1 to be covered with the resistance layer 2 having resistance against dry etching, and the resistance layer 2 acts as a stop layer even when the holes 114 are formed over the insulating layer 103, so that the surface of the resistance layer 102 can be prevented from being changed in quality.</p> |
