发明名称 |
Method of fabricating silicided LDD transistor |
摘要 |
A gate-drain overlapped device, comprising: a first conductive type substrate; a gate insulating film formed on the substrate; a gate comprising a gate conductive line patterned on the gate insulating film, and a conductive layer coated on the gate conductive line and extending to a predetermined length on the gate insulating film; and a drain/source region comprising a second conductive type low density diffusion region in the substrate below the extending area of the conductive layer and a second conductive type high density diffusion region in contact with the low density diffusion region in the substrate, which is significantly improved in the resistance of a polysilicon gate conductive line and in uniform electrical properties.
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申请公布号 |
US5658815(A) |
申请公布日期 |
1997.08.19 |
申请号 |
US19960581787 |
申请日期 |
1996.01.02 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
LEE, CHANG-JAE;KIM, TAE GAK |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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