发明名称 METHOD FOR INSPECTING DEFECT
摘要 <p>PROBLEM TO BE SOLVED: To detect a minute defective position by making the electron beam generated from a field emission cathode to a small energy to scan and emit it to a sample, and detecting the secondary charged particle generated from the sample. SOLUTION: As a power source 18, a dc high voltage power source of about -1kV is used, and when the potential of a sample 32 is the same earth potential as a mirror body 16, an electron beam of 1 KeV is incident on the sample 32 from a filed emission cathode 11. However, when a decelerating potential, for example, -900V is given by a power source 26 which is an electron beam decelerating means provided on the sample 32, the electron energy of the sample 32 becomes 100eV. When the electron beam decelerated to a necessary speed by the power source 26 is emitted to the sample 32, secondary electrons are generated, and the electrons passed through an auxiliary electrode 9 of them are collected by a secondary electron detector 22. The detected current outputted from the detector 22 is inputted to an indicator 29 through an amplifier 28. The deflection signal of an oscillator 24 is imparted synchronously also to the indicator 29, and the defect information signal of an insulating film 2 is displayed on the indicator 29.</p>
申请公布号 JPH09218171(A) 申请公布日期 1997.08.19
申请号 JP19970007993 申请日期 1997.01.20
申请人 HITACHI LTD 发明人 HOSOKI SHIGEYUKI;ICHIHASHI MIKIO;WADA YASUO;MUNAKATA TADASUKE;HONDA YUKIO
分类号 G01N23/225;G01R31/26;G01R31/302;H01J37/22;H01J37/26;H01L21/66;(IPC1-7):G01N23/225 主分类号 G01N23/225
代理机构 代理人
主权项
地址