发明名称 |
Method of chamber cleaning in MOCVD application |
摘要 |
The invention is a process for cleaning a chamber after a chemical vapor deposition has been performed therein. A residue formed during the deposition is combined with a reactive species to form a gas containing an organic substance once found in the residue and to form a film on the chamber walls and internal parts. The gas and the film are removed from the chamber. The formation of a polymer byproduct on the chamber walls and other internal parts of the chamber is minimized by the method of the invention.
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申请公布号 |
US5658391(A) |
申请公布日期 |
1997.08.19 |
申请号 |
US19950554690 |
申请日期 |
1995.11.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BULEY, TODD W.;SANDHU, GURTEJ S. |
分类号 |
C23C16/44;(IPC1-7):B08B3/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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