| 摘要 |
PROBLEM TO BE SOLVED: To reduce the manufacturing costs of a display by electrically combining the gate electrode and cathode electrode of a field emitter array with MOSFETs respectively, and thereby driving the array. SOLUTION: After a silicon substrate 30 and a silicon layer 30' have been etched in an isotropic manner, they are primarily oxidized so as to allow a thin silicon oxide film 32 to be formed over the substrate 30 and the layer 30', so that electric field emitting chips 33 are thereby formed. An oxide film 32 located at a position for the first and second MOSFETs, is removed, a shock absorbing oxide film 34 is then formed over the aforesaid removed spot, and a silicon nitride film 35 is thereby deposited over the spot. After that, a silicon film 35 in the active areas of the MOSFETs are removed. In this place, the gate electrode 43 and cathode electrode of a field emitter ray are combined with the MOSFETs so as to allow the array to be driven. By this constitution, a great number of electric field emitting chips arranged in the array start emitting electrons over to the silicon layer 30'. |
