| 摘要 |
A semiconductor device is provided which comprises: a semiconductor chip having a semiconductor substrate, an insulation a film, a field oxide film and pads formed on a surface thereof; bumps respectively formed on the pads; inner leads bonded to the semiconductor chip with intervention of bumps; a metal interconnection formed in an indentation which is formed between the pads and an edge of the semiconductor chip by removing part of the insulation film and/or the field oxide film of the semiconductor chip; and a pair of dummy electrodes respectively formed between each of the pads and the metal interconnection and between the metal interconnection and the edge of the chip at a higher elevation than the metal interconnection and spaced apart a predetermined distance from the metal interconnection, the pair of dummy electrodes being provided for each of the inner leads, which is located thereabove.
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