发明名称 Method for fabricating interconnecting lines and contacts using conformal deposition
摘要 The present invention is a method for fabricating interconnecting lines and contacts using conformal deposition. This invention applies patterning trenches simultaneously for interconnecting lines and contact holes and forming spacers technologies to make fully filled interconnecting line and contact holes. Then, utilizing the conformal deposition and blanket etch-back etching method, the present invention can fabricating interconnecting lines and contacts simultaneously.
申请公布号 US5658830(A) 申请公布日期 1997.08.19
申请号 US19960679198 申请日期 1996.07.12
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 JENG, ERIK S.
分类号 H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/768
代理机构 代理人
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