| 摘要 |
PROBLEM TO BE SOLVED: To lessen a diffusion region in sheet resistance so as to enable a semiconductor device to operate at a high speed by a method wherein a conductive material-filled layer used for connecting a contact plug with source/drain regions is formed below the contact plug. SOLUTION: A semiconductor device is composed of a transistor device, first interloyer insulating layers 18 and 19 formed on the transistor device, a second interlayer insulating layer 30 provided onto the first interlayer insulating layers 18 and 19, and a wiring 33 provided to the second interlayer insulating layer 30. The transistor device is equipped with source/drain regions 22, a channel region 23, and a gate electrode 15 all formed on a semiconductor substrate 10. Conductive material is filled into a first opening 20 bored in the first interlayer insulating layers 18 and 19 for the formation of a conductive material- filled layer 26. A contact plug 32 is provided inside a second opening bored in the second interlayer insulating layer 30 to connect the conductive material- filled layer 26 and the wiring 33 together. |
