Semiconductor device mfr.

摘要

The method involves forming a Si element substrate (3) on a support substrate (1) through an insulated operation member (2). A first insulating film (4) is formed on the Si substrate, which is patterned to the predetermined area to form a trench (8) into the insulated separation member. At the inner surface of the trench and the insulating film, a polysilicon film (5A) is deposited. By the anisotropic etching process, the polysilicon film in the portions other than the side attachment wall of the Si substrate is removed. The, the polysilicon film in the trench is oxidized after etching the first insulating film. After this etching and the oxidization process, a second insulating film (6) is formed to contact insulating separation member.