| 摘要 |
A charge storage device (50, 91), such as an integrated circuit memory (91), including a dielectric (56, 89) comprising a barium-strontium-niobium oxide. A liquid precursor including the metals barium, strontium, and niobium is prepared and applied to a platinum electrode (55, 88). The precursor is baked and annealed to form a dielectric (56, 89) having the formula BaxSryNbzO30, where x = 1.3 to 3.5, y = 1.5 to 3.7, and z = 10. A top platinum electrode (63, 90) is then formed to provide a memory cell capacitor (50, 84). Optimum results to date have been obtained with Ba2Sr3Nb10O30, which yields a memory cell dielectric with dielectric constant over 1000 and a leakage current of less than 10-5 amperes per square centimeter for voltages up to 5 volts.
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