Fabrication method for schottky electrodes onto semiconductor devices

摘要

A novel electrode structure for Schottky electrodes and Ohmic electrodes and novel methods of fabricating electrodes by freely controlling electric characteristics of electrodes on semiconductors. Interface states density of a semiconductor (11) after deposition of an electrode metal (13, 14) is decreased by flattening the surface of the semiconductor on an atomic level to freely control the Schottky barrier height. The method can realize an ideal Ohmic electrode having a Schottky barrier height of substantially zero. The Schottky barrier height is varied freely by decreasing the interface level density and selecting work function of the electrode metal. The method can provide stable Schottky and Ohmic electrodes (13, 14) without need of heat treatment. Further, the method can provide Ohmic electrodes without high concentration doping. <IMAGE>