| 摘要 |
A phase-shifting lithographic mask (500) is made by a procedure involving only a single patterned electron, ion, or photon bombardment of a positive resist layer. The bombardment is arranged to produce three regions (14, 15, 16) in the resist containing mutually different bombardment doses (D1, D2, 0)per unit area, one of which is typically zero. These three regions are then used--in conjunction with separate wet development steps with two developers of different concentrations--in order to pattern the resist layer and to form an underlying double layer consisting of a patterned opaque layer ( 13) located on a differently patterned transparent phase-shifting layer (12), the transparent phase-shifting layer being located on, or being part of, a transparent substrate (11). (With suitable geometrical rearrangement of the regions, a negative resist layer can also be used.) <IMAGE> <IMAGE> |
