| 摘要 |
The surface of a silicon wafer is exposed periodically through very small openings of an insulation layer provided on the surface. In this state, angular lumps of single-crystal silicon are generated near the opening parts by a selective epitaxial growth and a lateral growth, and are grown until they are collided with each other. The insulation layer is removed through gaps left between the angular lumps, and a resin is embedded in the gaps. After electrode layers are formed on the surfaces of the angular lumps, the surfaces are fastened on a base board via a resin. Then, the angular lumps of single-crystal silicon are separated from the silicon wafer, and reverse electrodes are formed on them. |
