Blue light emitting device and production method thereof

摘要

A method of manufacturing a gallium nitride type blue light emitting device by a process of fewer steps. The device comprises a multilayer structure that includes a first gallium nitride semiconductor layer doped with an impurity of a first conductivity type, a substantially intrinsic gallium nitride semiconductor active layer and a second gallium nitride semiconductor layer doped with an impurity having a second conductivity type opposite to the first conductivity type. In the manufacture of the device, the first and second gallium nitride semiconductor layers and the gallium nitride semiconductor active layer are formed by thermal CVD and are then left standing for natural cooling in an inert gas.