High voltage power integrated circuit with level shift

摘要

Level shift devices are formed in the high voltage termination region 5 of an integrated circuit. The level shift devices provide a connection between the higher voltage, floating circuit 2 and a ground referenced lower voltage circuit 1. The structure of the level shift devices eliminates the need for a high voltage connector to cross over the low voltage connector, thereby eliminating the need for a thick dielectric. The level shift devices comprise MOSFETS formed in an epitaxial layer 10 and a polysilicon resistor 50 connected between a high voltage contact 53 and a drain contact 42. Ring shaped p-type regions 16 prevent cross-talk among the level shift MOSFETS.