Method of fabricating an abrupt hetero interface by organometallic vapor phase growth

摘要

A method of fabricating an abrupt hetero interface by organometallic vapor growth. This method has the steps of: supplying a first Group III source gas at a predetermined flow rate and a first Group V source gas at a predetermined flow rate to a growth chamber during a first growth process, thereby forming a first Group III-Group V compound layer; causing inflow of the first Group III source gas to the growth chamber to be stopped and keeping on supplying the Group V source gas to the growth chamber during a growth interruption process, thereby interrupting the growth of the first Group III-Group V compound layer; and changing the flow rate of the first Group V source gas to the growth chamber and simultaneously starting supply of a second Group III source gas at a predetermined flow rate to the growth chamber during a second growth process, thereby forming a second Group III-Group V compound layer on the first Group III-Group V compound layer. <IMAGE>