| 摘要 |
The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according to the invention is constructed such that, in an area adjacent to the surface of a semiconductor substrate (11), an active base region (18), an outer base region (17), and an emitter region (19) are formed. Furthermore, a base lead electrode (15) (one polysilicon layer) is formed to overlay the outer base region, and an emitter lead electrode (22) (another polysilicon layer) is formed above the active base region (18). A contact between the one polysilicon layer (15) and a metal interconnecting layer (23-2) is disposed right above the outer base region. Since the insulation film (14) that hinders the filament from being formed is not disposed under the one polysilicon layer (15), a filament is widely formed into an N-type well region when a PN junction is zapped by the zener zap trimming method. <IMAGE> |
