| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate treating device capable of sufficiently assuring the thermal and mechanical strength of a structural element heated to a temp. approximately equal to the temp. of a substrate to be treated and exhibiting stable functions over a long period of time. SOLUTION: A semiconductor wafer S as the substrate to be treated is supported by a substrate holder 6 of this substrate treating device. This semiconductor wafer S is held at 300 to 1200 deg.C and while the substrate holder 6 is rotated at the number of revolutions of 500per minute, the semiconductor wafer S is subjected to a prescribed treatment by a vapor growth method. The substrate holder 6 is formed of a carbon fiber reinforced composite material consisting essentially of carbon and an SiC layer is formed on its surface.</p> |
