Windowed source and segmented backgate contact linear geometry source cell for power DMOS processes

摘要

A source cell having reduced area and reduced polysilicon window width requirements for use as the source region in a DMOS transistor is disclosed, comprising: a source region of semiconductor material disposed on a semiconductor substrate; a plurality of backgate contact segments of predetermined size and separated by predetermined distances; and a plurality of source contact windows alternating with the backgate contact segments so that a narrow source contact region is formed of alternating source contact and backgate contact material. A DMOS transistor embodying the source region including the backgate contact segments and windowed source contacting regions of the invention is disclosed. An integrated circuit providing an array of DMOS transistors having the improved source regions of the invention is disclosed. Other devices, systems and methods are also disclosed.