| 发明名称 |
Semiconductor light emitting diode |
| 摘要 |
A semiconductor light emitting diode includes a compound semiconductor substrate and a double-hetero structure of (AlxGa1-x)yIn1-yP (0</=x</=1, 0<y<1) as an active layer, and an upper clad layer of the double-hetero structure has a larger band gap energy (Eg) than the band gap energy of the active layer and has a thickness of 3-50 mu m.
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| 申请公布号 |
US5656829(A) |
申请公布日期 |
1997.08.12 |
| 申请号 |
US19950498785 |
申请日期 |
1995.07.05 |
| 申请人 |
SHOWA DENKO K.K. |
发明人 |
SAKAGUCHI, YASUYUKI;NAKAMURA, SIGEMASA;HOSOKAWA, YASUO;SAITO, YUTAKA |
| 分类号 |
H01L33/02;H01L33/14;H01L33/30;(IPC1-7):H01L33/00;H01L27/15 |
主分类号 |
H01L33/02 |
| 代理机构 |
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