| 摘要 |
A method of depositing a thin film of a metal oxide by chemical vapor deposition is disclosed. This method is applicable to, e.g., forming thin films of perovskite-phase titanates, zirconates, and/or niobates of divalent metals such as Ba, Sr, and/or Ca. In one example, a first precursor comprises a divalent metal coordinated to carboxylate and polyether ligands, and a second precursor comprises a tetravalent metal coordinated to one or more alkoxide ligands. These precursors are delivered in a mixed stable vapor phase 12 to a preferably heated substrate 14, where a surface-mediated reaction between the two precursors releases a volatile ester and deposits an intermediate compound film 18 comprising the divalent metal, the tetravalent metal and oxygen on the substrate. The substrate may be subsequently annealed to drive off unreacted ligands and/or fully crystallize the intermediate compound film into a perovskite-phase film 20. The present invention may be used to deposit carbonate-free films at temperatures generally less than 500 DEG C., and may also be used to control stoichiometry and homgeneity of the resulting film.
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