发明名称 |
P-type gallium nitride |
摘要 |
Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5x1011/cm3 and hole mobilities of about 500 cm2/V-sec, measured at 250 DEG K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.
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申请公布号 |
US5657335(A) |
申请公布日期 |
1997.08.12 |
申请号 |
US19930146502 |
申请日期 |
1993.11.01 |
申请人 |
THE REGENTS, UNIVERSITY OF CALIFORNIA |
发明人 |
RUBIN, MICHAEL;NEWMAN, NATHAN;FU, TRACY;ROSS, JENNIFER;CHAN, JAMES |
分类号 |
H01L33/00;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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