| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film of a dielectric high in relative permittivity not only at 1kHz but also at high frequency like 100MHz and excellent in characteristics to a DC bias, by using an oxide containing a specific metal. SOLUTION: This thin film of a dielectric comprises a perovskite type compound oxide containing Ba, Ti and Sn as metal elements in which these components are shown as BaTi1-x Snx O3 , (x) and an average crystal particle diameter (d) (μm) exist in a range enclosed by lines A ((x) 0.02, (d) 0.90)-B ((x) 0.02, (d) 0.185)-C ((x) 0.04, (d) 0.185)-D ((x) 0.10, (d) 0.160)-E ((x) 0.16, (d) 0.100)-F ((x) 0.20, (d) 0.080)-G ((x) 0.10, (d) 0.045)-H ((x) 0.07, (d) 0.045)-A in the figure 1. The thin film has >=1,000 relative permittivity at 100MHz measuring wavelength (at room temperature). This thin film is provided with electrodes at both sides to form a ceramic condenser and used. |
