| 摘要 |
The present invention relates to a solid low temperature phosphorus diffusion source that is an R2O3/P2O5 compound in which the ratio of R2O3 to P2O5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P2O5 to dope a silicon wafer, and the doped silicon wafer.
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