| 摘要 |
On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [2+E,ovs 11+EE ]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8x10-3 Pa and 8x10-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As4 and MAGa are supplied at 5x10-3 Pa and 8x10-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8x10-4 Pa to grow p-type GaAs 15. |
