| 发明名称 |
SCHOTTKY BARRIER DIODE AND A METHOD OF MANUFACTURING THEREOF |
| 摘要 |
A Schottky barrier diode includes a semiconductor substrate (10), an ohmic metal electrode (20) formed on a first region of the semiconductor substrate (10), and a Schottky metal electrode (30) formed on a second region spaced apart from the first region on the semiconductor substrate (10). The Schottky electrode (30) includes at least one ohmic portion (31) forming an ohmic contact with the semiconductor substrate (10), whereby rectifying characteristics of the Schottky barrier diode are improved.
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| 申请公布号 |
CA2064146(C) |
申请公布日期 |
1997.08.12 |
| 申请号 |
CA19922064146 |
申请日期 |
1992.03.26 |
| 申请人 |
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发明人 |
ARIYOSHI, HISASHI;SUEYOSHI, MASAAKI;SAKAMOTO, KOUICHI;FUKUDA, SUSUMU |
| 分类号 |
H01L21/28;H01L21/329;H01L29/872;(IPC1-7):H01L29/872;H01L21/04;H01L29/41 |
主分类号 |
H01L21/28 |
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代理人 |
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