发明名称 |
Semiconductor integrated circuit device having single-element type nonvolatile memory elements |
摘要 |
A semiconductor integrated device having a non-volatile memory element or memory cell of a single-element type in a non-volatile memory circuit employing a field effect transistor which has, in addition to a floating gate electrode for storage of information and a controlling gate electrode, a source which includes a heavily doped region having a depth into the semiconductor substrate extending from the major surface thereof which is large. The single-element type field effect transistor, furthermore, has a drain which includes a lightly doped region which has a depth extending into the semiconductor substrate from the major surface thereof which is small. |
申请公布号 |
US5656839(A) |
申请公布日期 |
1997.08.12 |
申请号 |
US19950422941 |
申请日期 |
1995.04.17 |
申请人 |
HITACHI, LTD. |
发明人 |
KOMORI, KAZUHIRO;NISHIMOTO, TOSHIAKI;MEGURO, SATOSHI;KUME, HITOSHI;KAMIGAKI, YOSHIAKI |
分类号 |
H01L21/8247;H01L27/06;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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