发明名称 Semiconductor devices, and methods for same
摘要 Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
申请公布号 AU1579697(A) 申请公布日期 1997.08.11
申请号 AU19970015796 申请日期 1997.01.16
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS 发明人 JOSEPH W. LYDING;KARL HESS
分类号 H01L29/78;H01L21/28;H01L21/30;H01L21/324;H01L29/51 主分类号 H01L29/78
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