HANDOTAISHUSEKIKAIROSOCHIOYOBISONOSEIZOHOHO

摘要

PURPOSE:To speed up operation speed by constituting the base region of a reverse direction bipolar transistor deeper than that of forward direction a bipolar transistor. CONSTITUTION:The base region (p-type semiconductor region 14) of a reverse direction bipolar transistor Tr2 of SICOS structure is constituted deeper than the base region (p-type semiconductor area) of a forward direction bipolar transistor Tr1. Thus, an epitaxial layer 3 of low impurities concentration of collector region are in contact with the base region of forward direction bipolar transistor Tr1 to reduce pn junction capacity at the base and collector regions. It speeds up operation of forward direction bipolar transistor Tr.