| 摘要 |
A semiconductor memory device capable of obtaining a sufficient charge storage capacity and yet having a reduced occupied memory cell area. The semiconductor memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulating film formed over the field effect transistor, a first charge storage electrode pattern having a plane plate shape and formed over the interlayer insulating film such that it is electrically connected with the field effect transistor, a second charge storage electrode pattern having a double cylindrical structure and formed over the first charge storage electrode pattern such that it is electrically connected with the first charge storage electrode pattern, and a dielectric film and a plate electrode sequentially formed over the entire exposed surfaces of the first and second charge storage electrode patterns. |
