<p>A plasma processing equipment executes film formation and etching with a plasma gas. The equipment comprises a gas discharging device (47) serving as a first electrode, a table (35) being provided with loading portions on which substrates (55a) to (55d) to be processed are loaded and rotating in the state of facing said gas discharging device (47), and a single conductive plate (102) provided under said loading portions and serving as a second electrode in common to said substrates (55a) to (55d) loaded on said loading portions. <IMAGE></p>
申请公布号
EP0788137(A2)
申请公布日期
1997.08.06
申请号
EP19970101452
申请日期
1997.01.30
申请人
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
发明人
SUZUKI, SETSU;TOKUMASU, NOBORU;MAEDA, KAZUO;AOKI, JUNICH, C/O CANON SALES CO., INC.