| 摘要 |
PURPOSE: To avoid the increase in the leakage current at a contact part by the miniaturization without increasing steps as well as avoiding the defective of shortage by a source/drain diffused layer formed on a field oxide film in a silicified MOSFET. CONSTITUTION: An oxide film 108 and a nitride film outside the oxide film 108 from an active region side and silicon is reacted to a high melting point metal on a diffused layer 116 in a field region. At this time, since a silicide 119 is not formed on the nitride film in this reaction time, the shortcircuit of the diffused layer 116 separated by the field region can be avoided. Furthermore, the silicide 119 is formed on the oxide film 108 in contact with the active region in the reaction time so that the oxide film 108 in contact with the active region in the contact aperture time may be prevented from being etched away thereby enabling the shortcircuit between the diffused layer 116 and a silicon substrate at the contact part to be avoided. |
