| 摘要 |
<p>The top-side (n-type) electrode and bottom-side (p-type) electrode of a Si chip (6) with a p-n junction are pressed against a Cu cathode electrode (4) and a Cu anode electrode (8) via Mo plates (5) and (7), respectively, thereby establishing electrical connection. The inner wall of a case (9) is round and the Si chip (6) is almost square. The top of the case (9) is covered with ceramic (2), for example. A washer (3) is a compression member. A chip frame 1 holds the Si chip (6) and Mo plates (5) and (7) in compression positions and simultaneously determines their locations within the case (9). Specifically, the side face of the Si chip (6) is not flush with the side face of each of the Mo plates (5) and (7). This enables the chip frame (1) to make the creepage distance longer. Since the chip frame is a single chip frame without any joint, the creepage distance between the anode and cathode electrodes is defined by part of the chip frame (1) that faces part of the surface of the Si chip (6) and parts of the surfaces of the Mo plates sandwiching the Si chip (6) between them. <IMAGE></p> |
