METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

There is provided a method for reducing absorptivity of moisture of an insulation film made of SiOF and for achieving a highly reliable semiconductor device. In a method for manufacturing a semiconductor device utilizing a silicon oxide film including fluorine as a layer insulation film of a semiconductor integrated circuit, an inert gas 14 is introduced in addition to source gases 11 - 13 during the formation of the silicon oxide film including fluorine. <IMAGE>